The double-gate (DG) FET provides a fundamental advantage over conventional single-gate (SG) FETs. In short-channel FETs the drain potential competes with that of the gate to influence the channel.
A technical paper titled “Cryogenic In-Memory Computing for Quantum Processors Using Commercial 5-nm FinFETs” was published by researchers at University of Stuttgart, Indian Institute of Technology ...
SEMICON West was held last week in San Francisco and I had the opportunity to attend the Emerging Architectures session. Serge Biesemans, vice president of process technology at Imec, gave a nice ...
SANTA CLARA, Calif., Sept. 24, 2024 (GLOBE NEWSWIRE) -- Silvaco Group, Inc. (SVCO) (Nasdaq: SVCO, “Silvaco” or the “Company”), a provider of TCAD, EDA software, and SIP solutions that enable ...
SAN FRANCISCO — Even before Gordon Moore delivers his keynote to the 50th annual International Solid State Circuits Conference (ISSCC) here, technologists were debating the merits of the IC ...
November 9, 2013. Imec announced that it has successfully demonstrated the first III-V compound semiconductor FinFET devices integrated epitaxially on 300-mm silicon wafers, through a unique silicon ...
How FinFET technology has changed power-consumption analysis. Steps involved in taking a hierarchical approach to performing proper power analysis. Verification expert Lauro Rizzatti recently ...
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